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Fast Recovery Epitaxial Diode (FRED) Module
Preliminary data VRSM V 1200 VRRM V 1200 Type MEA 250-12DA
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MEA 250-12 DA MEK 250-12 DA MEE 250-12 DA
VRRM = 1200 V IFAVM = 260 A trr = 450 ns
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MEK 250-12DA
1 2 3
MEE 250-012DA
1 2 3
Symbol IFRMS IFAVM yyx IFRM IFSM
Test Conditions TC = 75C TC = 75C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM TVJ = 45C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
Maximum Ratings 367 260 1480 2400 2640 2160 2380 28800 29300 23300 23800 -40...+150 -40...+125 110 A A A A A A A A2s A2s A2s A2s C C C W V~ V~
TVJ = 150C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine I2t TVJ = 45C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
Features International standard package with DCB ceramic base plate Planar passivated chips Short recovery time Low switching losses Soft recovery behaviour Isolation voltage 3600 V~ UL registered E 72873
q q q q q q q
TVJ = 150C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ Tstg TSmax Ptot VISOL Md dS dA a Weight Symbol IR Test Conditions TVJ = 25C TVJ = 25C TVJ = 125C IF = 150 A; IF = 260 A; VT0 rT RthJH RthJC trr IRM VR = VRRM VR = 0.8 * VRRM VR = 0.8 * VRRM TVJ TVJ TVJ TVJ = 125C = 25C = 125C = 25C Tc = 25C 50/60 Hz, RMS t = 1 min t=1s IISOL 1 mA Mounting torque (M6) Terminal connection torque (M6) Creeping distance on surface Strike distance through air Maximum allowable acceleration
875 3000 3600
Applications Antiparallel diode for high frequency switching devices Free wheeling diode in converters and motor control circuits Inductive heating and melting Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders
q q q q q
2.25-2.75/20-25 Nm/lb.in. 4.50-5.50/40-48 Nm/lb.in. 12.7 9.6 50 150 mm mm m/s2 g
q q
q q
Advantages High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Low losses
Characteristic Values (per diode) typ. max. 12 3 60 1.38 1.69 1.54 1.80 1.16 1.46 0.228 0.143 TVJ = 100C TVJ = 25C TVJ = 100C 450 500 55 83 mA mA mA V V V V V mW K/W K/W ns A A
Dimensions in mm (1 mm = 0.0394")
VF
For power-loss calculations only DC current DC current IF = 300 A VR= 600 V -di/dt = 400 A/ms
x IFAVM rating includes reverse blocking losses at TVJM, VR = 0.6 VRRM, duty cycle d = 0.5 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions
(c) 2000 IXYS All rights reserved
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749
MEA 250-12 DA MEE 250-12 DA MEK 250-12 DA
500 A 450 400 IF 350 300 250 200 150 20 100 50 0 0.0 0.5 1.0 1.5 VF 2.0 V 2.5 10 0 100 40 20 0 A/ms 1000 -diF/dt 0 200 400 600 A/ms 1000 800 -diF/dt 80 C TVJ= 100C 70 VR = 600V Qr 60 200 A TVJ= 100C 180 VR = 600V 160 IRM IF= 300A; max. 140 IF= 300A; typ. IF= 250A; typ. 120 I = 125A; typ. F 100 80 60
TVJ=125C TVJ= 25C
IF= 300A; max. I = 300A; typ. 50 IF= 250A; typ. F I = 125A; typ. 40 F
30
Fig. 1 Forward current IF versus voltage drop VF per leg
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 40 80 120 C 160 TVJ
Fig. 2 Reverse recovery charge Qr versus -diF/dt
1200 ns 1000 trr 800 600 400 200 0 0 200 400 600 A/ms 1000 800 -diF/dt
Fig. 3 Peak reverse current IRM versus -diF/dt
100 A V 90 VFR 70 60 50 40 1.0 80
TVJ= 100C VR = 600V
TVJ= 125C IF = 260A tfr VFR
2.5 s 2.0 tfr 1.5
Kf
IRM Qr
IF= 300A; max. IF= 300A; typ. IF= 250A; typ. IF= 125A; typ.
30 20 10 0 0 400 0.0 800 1200 A/ms diF/dt 0.5
Fig. 4 Dynamic parameters Qr, IRM versus junction temperature TVJ
0.25 K/W 0.20 ZthJS thJH 0.15
Fig. 5 Recovery time trr versus -diF/dt
Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJS calculation: i 1 2 3 4 Rthi (K/W) 0.002 0.008 0.054 0.164 ti (s) 0.08 0.024 0.112 0.464
0.10
0.05
0.00 0.001
0.01
0.1
1s
10 t
Fig. 7 Transient thermal impedance junction to heatsink
(c) 2000 IXYS All rights reserved
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